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High Performance Isolated Collector Silicon Bipolar Transistor Technical Data
HBFP-0405
Features
* Ideal for High Gain, Low Current Applications * Typical Performance at 1.8 GHz Associated Gain of 18 dB and Noise Figure of 1.2 dB at 2 V and 2 mA P1dB of 5 dBm at 2 V and 5 mA * Miniature 4-lead SC-70 (SOT-343) Plastic Package * Transition Frequency fT = 25 GHz
Description Surface Mount Plastic Package/ SOT-343 (SC-70) Hewlett Packard's HBFP-0405 is a
Outline 4T
high performance isolated collector silicon bipolar junction transistor housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. HBFP-0405 provides an associated gain of 18 dB, noise figure of 1.2 dB, and P1dB of 5 dBm at 1.8 GHz. Because of high gain and low current characteristics, HBFP-0405 is ideal for cellular/ PCS as well as for C-Band and Ku-Band applications. This product is based on a 25 GHz transition frequency fabrication process, which enables the products to be used for high performance, low noise applications at 900 MHz, 1.9 GHz, 2.4 GHz, and beyond.
Pin Configuration
Applications
* LNA, Oscillator, Driver Amplifier, Buffer Amplifier, and Down Converter for Cellular and PCS Handsets and Cordless Telephones * Oscillator for TV Delivery and TVRO Systems up to 12 GHz
Emitter Collector
Note: Package marking provides orientation and identification.
02
Base
Emitter
2
HBFP-0405 Absolute Maximum Ratings
Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2] Junction Temperature Storage Temperature Units V V V mA mW C C Absolute Maximum[1] 1.5 15.0 4.5 12 54 150 -65 to 150 Thermal Resistance: jc = 550C/W
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. PT limited by maximum ratings.
Electrical Specifications, TC = 25C
Symbol Parameters and Test Conditions IC = 1 mA, open base VCB = 5 V, IE = 0 VEB = 1.5 V, IC = 0 VCE = 2 V, IC = 2 mA IC = 2 mA, VCE = 2 V, f = 1.8 GHz IC = 2 mA, VCE = 2 V, f = 1.8 GHz IC = 5 mA, VCE = 2 V, f = 1.8 GHz Units V nA A -- dB dB dB 16.5 50 80 1.2 18 17 5 Min. 4.5 150 15 150 1.5 Typ. Max. DC Characteristics BVCEO Collector-Emitter Breakdown Voltage I CBO I EBO hFE Collector-Cutoff Current Emitter-Base Cutoff Current DC Current Gain
RF Characteristics FMIN Minimum Noise Figure Ga |S 21 |2 P-1dB Associated Gain Insertion Power Gain Power Output @ 1 dB Compression Point
IC = 5 mA, VCE = 2 V, f = 1.8 GHz dBm
3
HBFP-0405 Typical Scattering Parameters,
VCE = 2 V, IC = 2 mA, TC = 25C
Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang
0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0
0.910 0.889 0.855 0.841 0.774 0.730 0.701 0.634 0.570 0.521 0.477 0.443 0.412 0.386 0.372 0.369 0.366 0.370 0.387 0.405 0.421 0.437 0.454
-4.2 -21.2 -37.6 -41.4 -60.9 -72.0 -79.4 -96.0 -112.3 -127.0 -141.2 -154.7 -168.7 177.1 162.2 147.7 130.7 116.2 102.9 91.4 80.9 70.5 60.3
16.5 16.3 15.7 15.6 14.8 14.3 13.9 13.0 12.0 11.2 10.4 9.7 9.0 8.5 7.9 7.5 7.1 6.6 6.2 5.7 5.3 4.9 4.4
6.665 6.496 6.101 5.993 5.484 5.164 4.964 4.450 3.996 3.620 3.320 3.047 2.829 2.646 2.493 2.371 2.258 2.141 2.042 1.937 1.834 1.753 1.669
176.2 160.6 146.0 142.5 125.9 116.8 110.9 97.0 84.7 73.4 62.9 53.6 44.2 34.9 25.6 16.8 8.1 -1.3 -9.8 -18.3 -26.6 -35.2 -43.7
-49.6 -35.6 -30.4 -29.5 -26.4 -25.1 -24.5 -23.4 -22.7 -22.3 -21.9 -21.8 -21.5 -21.3 -21.0 -20.7 -20.4 -20.0 -19.8 -19.5 -19.3 -19.0 -18.8
0.003 0.017 0.030 0.033 0.048 0.055 0.059 0.068 0.073 0.077 0.080 0.082 0.084 0.087 0.089 0.093 0.096 0.100 0.103 0.105 0.109 0.112 0.115
88.5 80.5 71.9 69.6 57.5 50.6 46.4 37.0 28.7 21.7 15.6 10.7 6.0 1.6 -2.1 -7.0 -10.7 -14.7 -19.2 -23.6 -27.9 -32.4 -37.0
0.995 0.982 0.951 0.937 0.880 0.843 0.817 0.758 0.708 0.669 0.634 0.613 0.591 0.571 0.550 0.525 0.496 0.471 0.444 0.425 0.411 0.398 0.385
-2.2 -10.5 -18.8 -20.9 -30.8 -36.4 -39.8 -47.8 -54.9 -60.9 -66.4 -71.5 -76.4 -80.8 -86.1 -90.5 -95.2 -100.2 -106.7 -113.9 -121.3 -127.7 -133.5
HBFP-0405 Noise Parameters: VCE = 2 V, IC = 2 mA
Freq. GHz 0.9 1.0 1.5 1.8 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 Fmin dB 1.07 1.09 1.19 1.25 1.29 1.39 1.48 1.57 1.70 1.78 1.87 2.00 2.10 2.18 2.29 2.35 2.50 2.65 2.76 2.93 2.94 Mag 0.569 0.558 0.504 0.474 0.456 0.423 0.391 0.352 0.318 0.290 0.257 0.215 0.179 0.157 0.125 0.116 0.140 0.163 0.191 0.226 0.254 opt Ang 9.3 11.6 22.0 28.7 33.6 48.2 59.3 72.1 83.1 93.9 107.3 118.3 133.7 153.1 -179.2 -154.8 -123.4 -104.1 -89.2 -73.4 -61.4 RN/50 Ga dB 23.46 22.67 19.64 18.28 17.50 15.91 14.39 13.29 12.29 11.43 10.71 10.03 9.47 8.97 8.50 7.98 7.63 7.21 6.81 6.51 6.16
20.9 20.6 19.2 18.5 18.0 16.6 15.6 14.2 13.0 12.1 10.9 10.5 10.4 10.2 11.0 12.0 13.7 15.9 18.6 22.3 26.3
S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the base lead, the output reference plane is at the end of the collector lead. S and noise parameters include the effect of four plated through via holes connecting emitter landing pads on the top of test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each emitter lead contact point, one via on each side of that point.
4
HBFP-0405 Typical Scattering Parameters,
VCE = 2 V, IC = 5 mA, TC = 25C
Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang
0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0
0.819 0.775 0.704 0.681 0.585 0.531 0.500 0.440 0.392 0.360 0.334 0.315 0.302 0.295 0.301 0.311 0.327 0.346 0.369 0.392 0.410 0.428 0.446
-6.2 -30.3 -52.4 -57.2 -81.5 -94.5 -102.7 -121.3 -138.9 -154.1 -168.9 177.0 162.5 148.1 133.7 120.4 105.9 94.0 83.4 74.1 65.6 56.9 48.2
22.0 21.5 20.6 20.3 18.8 17.9 17.3 15.9 14.6 13.5 12.5 11.6 10.9 10.2 9.6 9.0 8.5 8.0 7.6 7.1 6.6 6.2 5.7
12.630 11.912 10.664 10.308 8.689 7.817 7.306 6.208 5.362 4.716 4.214 3.814 3.491 3.229 3.010 2.827 2.668 2.520 2.389 2.261 2.141 2.038 1.937
174.5 153.5 134.9 130.7 111.9 102.5 96.7 83.7 72.4 62.3 52.9 44.3 35.7 27.4 19.0 10.8 2.6 -5.8 -13.8 -21.9 -29.9 -38.0 -46.0
-50.2 -36.2 -31.5 -30.8 -28.1 -27.2 -26.6 -25.6 -24.8 -24.2 -23.6 -23.1 -22.5 -22.0 -21.5 -21.0 -20.5 -20.0 -19.5 -19.1 -18.7 -18.4 -18.1
0.003 0.016 0.027 0.029 0.039 0.044 0.047 0.053 0.057 0.061 0.066 0.070 0.075 0.079 0.084 0.089 0.095 0.101 0.106 0.110 0.116 0.120 0.124
87.8 77.1 67.3 64.9 54.0 49.0 46.0 39.9 34.6 30.4 26.5 23.0 19.0 15.1 11.1 6.4 2.1 -3.0 -7.7 -12.8 -18.0 -23.1 -28.5
0.990 0.959 0.897 0.875 0.783 0.733 0.703 0.641 0.597 0.566 0.541 0.528 0.513 0.499 0.484 0.463 0.439 0.414 0.389 0.370 0.357 0.345 0.334
-2.8 -13.4 -23.3 -25.5 -35.2 -40.1 -43.0 -49.4 -55.0 -59.7 -64.2 -68.6 -73.0 -77.0 -82.0 -86.1 -90.5 -95.4 -101.6 -108.5 -115.8 -122.3 -127.9
HBFP-0405 Noise Parameters: VCE = 2 V, IC = 5 mA
Freq. GHz 0.9 1.0 1.5 1.8 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 Fmin dB 1.36 1.38 1.46 1.52 1.55 1.65 1.73 1.79 1.93 1.99 2.08 2.18 2.32 2.37 2.48 2.56 2.69 2.85 2.99 3.10 3.12 Mag 0.386 0.375 0.333 0.305 0.292 0.246 0.208 0.187 0.153 0.123 0.104 0.065 0.051 0.068 0.101 0.133 0.177 0.212 0.246 0.282 0.314 opt Ang 2.8 5.0 17.7 25.5 31.9 50.0 59.9 73.6 85.6 100.2 119.5 141.5 -169.0 -129.9 -96.3 -82.9 -71.2 -62.8 -54.1 -46.1 -37.3 RN/50 Ga dB 25.59 24.76 21.56 20.12 19.29 17.61 16.04 14.81 13.76 12.90 12.12 11.45 10.87 10.32 9.82 9.33 8.92 8.50 8.10 7.77 7.41
17.0 16.8 16.2 15.6 15.3 13.8 13.1 12.6 12.0 11.8 11.3 12.0 12.7 13.5 15.2 17.0 19.7 22.8 26.7 30.9 35.2
S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the base lead, the output reference plane is at the end of the collector lead. S and noise parameters include the effect of four plated through via holes connecting emitter landing pads on the top of test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each emitter lead contact point, one via on each side of that point.
5
HBFP-0405 Typical Performance
30 25 20 15 10 5 0 0 2 4 6 8 10 FREQUENCY (GHz) 2 mA 5 mA 10 mA 15 mA 5 30 25 20 15 10 5 0 0.9 GHz 1.8 GHz 2.5 GHz 3 GHz 4 GHz 5 GHz 6 GHz 02 4 6 8 10 12 14 16 18 20 22
ASSOCIATED GAIN (dB)
4
3
2 2 mA 5 mA 10 mA 15 mA 0 2 4 6 8 10
1 0 FREQUENCY (GHz)
ASSOCIATED GAIN (dB)
NOISE FIGURE (dB)
COLLECTOR CURRENT (mA)
Figure 1. Associated Gain vs. Frequency and Collector Current at 2 V.
3.50 3.00
Figure 2. Noise Figure vs. Frequency and Collector Current at VCE = 2 V.
30 25 20 15 10 5 0 0.9 GHz
Figure 3. Associated Gain vs. Collector Current and Frequency at 2 V.
2.50 0.9 GHz
ASSOCIATED GAIN (dB)
NOISE FIGURE (dB)
NOISE FIGURE (dB)
2.50 2.00 1.50 1.00 0.50 0 0 2 4 6 8 10 0.9 GHz 1.8 GHz 2.5 GHz 3 GHz 4 GHz 5 GHz 6 GHz 12 14 16 COLLECTOR CURRENT (mA)
1.8 GHz 2.5 GHz 3 GHz 4 GHz 5 GHz 6 GHz
2.00
1.8 GHz 2.5 GHz 3 GHz
1.50
4 GHz 5 GHz 6 GHz
1.00
0.50 0 0 1 2 3 4 5 6 0 1 2 3 4 5 6 VOLTAGE (V) VOLTAGE (V)
Figure 4. Noise Figure vs. Collector Current and Frequency at 2 V.
Figure 5. Associated Gain vs. Voltage and Frequency at 2 mA.
Figure 6. Noise Figure vs. Voltage and Frequency at 2 mA.
6
HBFP-0405 Die Model and PSPICE Parameters
C CMP9 R CMP5 C C = 17.213E-3 pF CMP2 DIODE AREA= REGION= MODEL = DBC TEMP= CMP1 NPNBJTSUBST CMP3 DIODE IS=IE-24 BV= IBV= IMAX= XTI= TNOM=21 KF= AF= AREA= REGION= MODEL=DCS TEMP= CMP10 DIODEMODELFORM # DIODE MODEL #
MODEL = DBC
R = 6.5915 OH
CMP11 DIODEMODELFORM # DIODE MODEL #
MODEL = DBE
RS= CJO=2.593E-14 TT= EG= VJ=0.8971 M=2.292E-1 N=1.0029 FC=0.8
ISR= NR= IKF= NBV= IBVL= NBVL= FFE=
CMP7 R B R=3.74196 OH C = 6.227E-3 pF CMP6 C
CMP16 DIODE TEMP= MODEL=DBE REGION= AREA=
AREA= REGION= MODEL=BJTMODEL
CMP8 R
R=1.565 OH CMP69 R
IS=I.40507E-17 BV= IBV= IMAX= XTI= TNOM=21 KF= AF=
RS= CJO=2.393E-14 TT= EG= VJ=0.729 M=0.44 N=1 FC=0.8
ISR= NR= IKF= NBV= IBVL= NBVL= FFE=
CMP12 DIODEMODELFORM CMP68 BITMODELFORM # BJT MODEL # NPN=yes PNP=
MODEL = BJTMODEL
XX R-1 OH E IS=IE-24 BV= IBV= IMAX= XTI= TNOM=21 KF= AF=
# DIODE MODEL #
MODEL = DCS
Reverse Forward BR=1 BF=1E6 IKE=1.4737E-1 IKR=1.1E-2 ISE=7.094E-20 ISC= NC=2 NE=1.006 VAR=3.37 VAF=4.4E1 NR=1.005 NF=1 TF=5.3706E-12 TR=4E-9 XTF=20 VTF=0.8 ITF=2.21805486E-1 PTF=22 XTB=0.7 APPROXOB=yes
Diode and junction EG=1.17 CJC=2.7056E-14 IS=4.4746E-18 VJC=.6775 MJC=0.3319 IMAX= XTI=3 XCJC=4.39790997E-1 TNOM=21 FC=0.8
Noise Parasitics RB-9.30144818 KI= IRB=3.029562E-6 AF= KB= RBM=.1 AB= RE= RC= FB=
RS=2.17347E2 CJO=8.974E-14 TT= EG= VJ=0.6 M=0.42 N= FC=0.8
ISR= NR= IKF= NBV= IBVL= NBVL= FFE=
Substrate IS5= NS=
CJE=7.474248E-14 VJE=0.9907 Substrate MJE=0.5063 IS5= NS= CJS= VJS= MJS=
This model can be used as a design tool. It has been tested on MDS for various specifications. However, for more precise and accurate design, please refer to the measured data in this data sheet. Note: The value of beta was high (BF = 1E6) to compensate for the fact that diode DBE reduces the current going into the base (current flows through DBE). The diodes are necessary to model the non-linear effects.
7
SOT343 Package Model
C = 0.05 pF
CCBC C LLB L LT1 L LLI L
BASE
COLLECTOR
CMP44 L
LT3 L
LL3 L
L = 0.22 nH C = 0.08 pF
L = 0.2 nH
C2T1 C C = 0.05 pF C1T1 C CCEB C
L = 0.7 nH
EMITTER
LL2 L
L = 0.7 nH
C1T3 C
L = 0.5 nH C = 0.1 pF
C2T3 C
L = 0.2 nH C = 0.144 pF
L = 0.2 nH
C = 0.01 pF
CCEC C
AGROUND
AGROUND
C = 0.04 pF
AGROUND
AGROUND
C = 0.1 pF AGROUND
C1T2 C
L = 0.1 nH
LT2 L
C = 0.04 pF AGROUND
C2T2 C
L = 0.15 nH
LLE L
AGROUND
8
Part Number Ordering Information
Part Number HBFP-0405-TR1 HBFP-0405-TR2 HBFP-0405-BLK Devices per Reel 3000 10,000 100 Container 7" Reel 13" Reel antistatic bag
Package Dimensions
SOT-343 (SC-70 4 Lead)
1.30 (0.051) BSC 1.30 (.051) REF
2.60 (.102) E E1 1.30 (.051)
0.55 (.021) TYP 1.15 (.045) BSC e D h 1.15 (.045) REF
0.85 (.033)
A
b TYP
A1 L DIMENSIONS
C TYP
SYMBOL A A1 b C D E e h E1 L
MAX. MIN. 1.00 (0.039) 0.80 (0.031) 0.10 (0.004) 0 (0) 0.35 (0.014) 0.25 (0.010) 0.20 (0.008) 0.10 (0.004) 2.10 (0.083) 1.90 (0.075) 2.20 (0.087) 2.00 (0.079) 0.65 (0.025) 0.55 (0.022) 0.450 TYP (0.018) 1.35 (0.053) 1.15 (0.045) 0.35 (0.014) 0.10 (0.004) 10 0
DIMENSIONS ARE IN MILLIMETERS (INCHES)
9
Device Orientation
REEL TOP VIEW 4 mm END VIEW
CARRIER TAPE USER FEED DIRECTION COVER TAPE
8 mm
02
02
02
02
Tape Dimensions
For Outline 4T
P P0 D P2
E
F W
D1 t1 (CARRIER TAPE THICKNESS)
8 MAX.
K0
5 MAX.
A0
B0
DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER DIAMETER PITCH POSITION WIDTH THICKNESS CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION)
SYMBOL A0 B0 K0 P D1 D P0 E W t1 F P2
SIZE (mm) 2.24 0.10 2.34 0.10 1.22 0.10 4.00 0.10 1.00 + 0.25 1.55 0.05 4.00 0.10 1.75 0.10 8.00 0.30 0.255 0.013 3.50 0.05 2.00 0.05
SIZE (INCHES) 0.088 0.004 0.092 0.004 0.048 0.004 0.157 0.004 0.039 + 0.010 0.061 0.002 0.157 0.004 0.069 0.004 0.315 0.012 0.010 0.0005 0.138 0.002 0.079 0.002
PERFORATION
CARRIER TAPE DISTANCE
www.hp.com/go/rf For technical assistance or the location of your nearest Hewlett-Packard sales office, distributor or representative call: Americas/Canada: 1-800-235-0312 or 408-654-8675 Far East/Australasia: Call your local HP sales office. Japan: (81 3) 3335-8152 Europe: Call your local HP sales office. Data subject to change. Copyright (c) 1998 Hewlett-Packard Co. Printed in U.S.A. 5968-0140E (6/98)

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